BFG31,115 NXP Semiconductors, BFG31,115 Datasheet - Page 4

• Manufacturer Part Number: BFG31,115
• Description: TRANS PNP 10V 5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG31,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Dc Current Gain Hfe Max: 25 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000180115::BFG31 T/R::BFG31 T/R

NXP Semiconductors
1995 Sep 12
handbook, halfpage
handbook, halfpage
P tot
PNP 5 GHz wideband transistor
(W)
f = 1 MHz; T
(pF)
C re
Fig.4
1.2
1.0
0.8
0.6
0.4
0.2
0
6
5
4
3
2
1
0
0
amb
Feedback capacitance as a function of
collector-emitter voltage.
Fig.2 Power derating curve.
= 25 C
50
10
100
20
150
V
T
CE
s
MBB346
MBB344
( C)
(V)
o
200
30
4
handbook, halfpage
handbook, halfpage
V
(GHz)
V
h
CE
CE
T f
Fig.3
Fig.5
FE
= 10 V; T
= 10 V; T
80
60
40
20
0
4
8
6
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
amb
amb
= 25 C.
= 25 C.
100
50
I
I
Product specification
C
C
(mA)
(mA)
MBB345
MBB347
BFG31
200
100