BFG31,115 NXP Semiconductors, BFG31,115 Datasheet - Page 2

• Manufacturer Part Number: BFG31,115
• Description: TRANS PNP 10V 5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG31,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Dc Current Gain Hfe Max: 25 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000180115::BFG31 T/R::BFG31 T/R

NXP Semiconductors
FEATURES
 High output voltage capability
 High gain bandwidth product
 Good thermal stability
 Gold metallization ensures
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
1995 Sep 12
V
I
P
h
f
G
V
V
V
V
I
P
T
T
C
T
C
SYMBOL
SYMBOL
FE
excellent reliability.
stg
j
CEO
tot
o
CBO
CEO
EBO
tot
PNP 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
output voltage
PARAMETER
PARAMETER
PINNING
1
2
3
4
PIN
open emitter
open base
open collector
up to T
open base
up to T
I
T
I
f = 500 MHz; T
I
f = 800 MHz; T
I
R
C
C
C
C
amb
L
= 70 mA; V
= 70 mA; V
= 70 mA; V
= 100 mA; V
= 75 ; T
= 25 C
emitter
base
emitter
collector
s
s
= 135 C ; note 1
= 135 C; note 1
CONDITIONS
DESCRIPTION
amb
2
CE
CE
amb
CE
amb
CONDITIONS
CE
= 25 C
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
= 10 V;
lfpage



25



MIN.
Top view




5.0
12
600





65

Fig.1 SOT223.
TYP.
MIN.
1
Product specification
15
100
1




20
15
3
100
1
150
175
MAX.
MAX.
2
BFG31
4
MSB002 - 1
V
mA
W
GHz
dB
mV
V
V
V
mA
W
C
C
UNIT
UNIT
3