BFG505,215 NXP Semiconductors, BFG505,215 Datasheet - Page 5

• Manufacturer Part Number: BFG505,215
• Description: TRANS NPN 6V 18MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG505,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934018760215; BFG505 T/R; BFG505 T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
V
Fig.3
T
amb
CE
(GHz)
Fig.5
f T
h FE
250
200
150
100
= 6 V.
50
12
= 25 C; f = 1 GHz.
0
8
4
0
10
10
3
DC current gain as a function of collector
current.
1
Transition frequency as a function of
collector current.
10
2
1
10
1
1
10
V CE = 6 V
V CE = 3 V
I C (mA)
10
I C (mA)
MRA639
MRA641
10
Rev. 04 - 22 November 2007
10
2
2
handbook, halfpage
handbook, halfpage
I
V
G
MSG = maximum stable gain;
G
C
Fig.4
CE
UM
max
= 0; f = 1 MHz.
(pF)
C re
gain
(dB)
0.4
0.3
0.2
0.1
Fig.6 Gain as a function of collector current.
= 6 V; f = 900 MHz.
25
20
15
10
= maximum unilateral power gain;
= maximum available gain.
0
5
0
0
0
Feedback capacitance as a function of
collector-base voltage.
2
G UM
MSG
4
BFG505; BFG505/X
4
6
8
Product specification
I C (mA)
8
V CB (V)
MRA640
MRA642
5 of 13
10
12