BFG505,215 NXP Semiconductors, BFG505,215 Datasheet - Page 10

• Manufacturer Part Number: BFG505,215
• Description: TRANS NPN 6V 18MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG505,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934018760215; BFG505 T/R; BFG505 T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistors
V
V
Z
o
CE
CE
= 50 .
= 6 V; I
= 6 V; I
C
C
= 5 mA.
= 5 mA.
Fig.16 Common emitter reverse transmission coefficient (S
180
180
Fig.17 Common emitter output reflection coefficient (S
0.25
0
0.20
135
135
135
135
0.2
0.2
0.2
0.15
0.5
0.5
Rev. 04 - 22 November 2007
0.10
0.5
0.05
90
90
90
90
1
1
1
40 MHz
3 GHz
3 GHz
2
2
2
5
45
45
40 MHz
45
45
5
5
MRA649
MRA648
22
BFG505; BFG505/X
0
).
0
12
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
10 of 13