BFG505,215 NXP Semiconductors, BFG505,215 Datasheet - Page 4

• Manufacturer Part Number: BFG505,215
• Description: TRANS NPN 6V 18MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG505,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934018760215; BFG505 T/R; BFG505 T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. V
I
h
C
C
C
f
G
F
P
ITO
SYMBOL
j
CBO
T
S
FE
L1
= 25 C unless otherwise specified.
e
c
re
NPN 9 GHz wideband transistors
UM
21
f
measured at 2f
p
CE
UM
2
= 900 MHz; f
= 6 V; I
is the maximum unilateral power gain, assuming S
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain; note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
C
= 5 mA; R
q
p
PARAMETER
= 902 MHz;
f
q
= 898 MHz and 2f
L
= 50 ; T
amb
V
I
I
V
I
I
see Fig.5
I
T
I
T
I
T
T
T
T
I
T
note 2
C
C
C
C
C
c
c
C
= 25 C;
q
amb
amb
amb
s
amb
s
amb
s
amb
amb
CB
CB
= 5 mA; V
= 5 mA; V
= 5 mA; V
= i
= 0; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
=
=
=
f
= 6 V; I
= 6 V; I
c
p
Rev. 04 - 22 November 2007
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= 25 C; f = 900 MHz
= 25 C; f = 900 MHz
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= 25 C; f = 900 MHz
opt
opt
opt
= 0 V
= 904 MHz.
CB
; I
; I
; I
C
C
C
= 6 V; f = 1 MHz; see Fig.4
E
E
EB
CE
CE
= 1.25 mA; V
= 5 mA; V
= 1.25 mA; V
CONDITIONS
CE
CE
CE
CE
= 0
= i
= 0.5 V; f = 1 MHz
= 6 V;
= 6 V;
= 6 V; see Fig.3
= 6 V; f = 1 GHz;
= 6 V;
= 6 V; R
e
= 0; f = 1 MHz
12
is zero and
CE
L
= 6 V;
= 50 ;
CE
CE
= 6 V;
= 6 V;
G
UM
=
10
60
16
MIN.
log
BFG505; BFG505/X
-------------------------------------------------------------- dB.
1
–
120
0.4
0.3
0.2
9
20
13
17
1.2
1.6
1.9
4
10
TYP.
S
11
Product specification
S
2
21
1
50
250
1.7
2.1
2
MAX.
–
S
22
4 of 13
2
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
UNIT