BFP 740 E6327 Infineon Technologies, BFP 740 E6327 Datasheet - Page 8

• Manufacturer Part Number: BFP 740 E6327
• Description: TRANSISTOR RF NPN 30MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 740 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
• Gain: 27dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 160 @ 25mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 42000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4 V
• Emitter- Base Voltage Vebo: 1.2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 740 E6327; BFP740E6327INTR; BFP740E6327XT; SP000016424

Source impedance for min.
noise figure vs. frequency
V
−0.1
0.1
0
CE
−0.2
0.2
−0.3
0.3
= 3 V, I
−0.4
0.4
0.2
−0.5
0.5
C
0.4
= 8 mA / 25 mA
I
c
= 25mA
6GHz
3GHz
4GHz
1
−1
1
2.4GHz
6GHz
I
c
1.8GHz
5GHz
= 8mA
2
0.9GHz
−1.5
1.5
4
−2
2
−3
3
−4
4
−5
5
−10
10
8
2009-12-04
BFP740