BFP 740 E6327 Infineon Technologies, BFP 740 E6327 Datasheet - Page 2

• Manufacturer Part Number: BFP 740 E6327
• Description: TRANSISTOR RF NPN 30MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 740 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
• Gain: 27dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 160 @ 25mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 42000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4 V
• Emitter- Base Voltage Vebo: 1.2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 740 E6327; BFP740E6327INTR; BFP740E6327XT; SP000016424

Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
2
C
C
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
A
A
S
CE
CB
EB
= 1 mA, I
= 25 mA, V
> 0°C
≤ 0°C
≤ 89°C
= 0.5 V, I
= 13 V, V
= 5 V, I
B
E
= 0
C
= 0
CE
BE
= 0
thJA
= 3 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
2)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
CES
CBO
EBO
C
B
FE
CEO
CES
CBO
EBO
tot
j
A
stg
(BR)CEO
thJS
min.
160
4
-
-
-
-65 ... 150
-65 ... 150
Values
Value
Value
≤ 380
160
150
typ.
250
4.7
3.5
1.2
13
13
30
4
3
-
-
-
max.
2009-12-04
100
400
30
3
-
BFP740
Unit
V
µA
nA
µA
-
Unit
V
mA
mW
°C
Unit
K/W