BFP 740 E6327 Infineon Technologies, BFP 740 E6327 Datasheet - Page 7

• Manufacturer Part Number: BFP 740 E6327
• Description: TRANSISTOR RF NPN 30MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 740 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
• Gain: 27dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 160 @ 25mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 42000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4 V
• Emitter- Base Voltage Vebo: 1.2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 740 E6327; BFP740E6327INTR; BFP740E6327XT; SP000016424

Power gain G
I
f = parameter
Noise figure F = ƒ (I
V
C
CE
= 25 mA
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
36
32
28
24
20
16
12
= 3V, f = 1.8 GHz
2
1
0
8
4
0
0
0
0.5
5
1
ma
1.5
10
, G
Z
Z
2
S
S
ms
= 50Ω
= Z
C
V
I
Sopt
c
)
CE
2.5
15
[mA]
= ƒ (V
[V]
3
20
CE
3.5
)
4
0.90GHz
1.80GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
25
4.5
30
5
7
Noise figure F = ƒ (I
V
Z
Noise figure F = ƒ (f)
V
S
CE
CE
= Z
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1.4
1.2
0.8
0.6
0.4
0.2
= 3V, f = parameter
2
1
0
= 3 V, Z
1
0
0
0
Sopt
1
5
f = 3GHz
f = 1.8GHz
f = 0.9GHz
f = 6GHz
f = 5GHz
S
= Z
2
10
Sopt
3
C
f [GHz]
I
c
)
15
[mA]
4
20
I
I
C
C
= 25mA
= 8mA
2009-12-04
5
BFP740
25
6
30
7