MZ0912B50Y,114 NXP Semiconductors, MZ0912B50Y,114 Datasheet - Page 6

• Manufacturer Part Number: MZ0912B50Y,114
• Description: TRANSISTOR POWER NPN SOT443A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B50Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 8dB
• Power - Max: 150W
• Current - Collector (ic) (max): 3A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994040114; MZ0912B50Y TRAY; MZ0912B50Y TRAY

Philips Semiconductors
1997 Feb 18
handbook, halfpage
handbook, full pagewidth
NPN microwave power transistor
V
Fig.4
V
CC
CC
(W)
P L
= 50 V; t
= 50 V; Z
70
60
50
0.95
Load power as a function of frequency;
(In broadband test circuit as shown in
Fig.3).
Fig.6 Optimum load impedance as a function of frequency, associated with input impedance.
p
o
= 10 s;
= 10 ; P
1.05
L
= 10%.
= 50 W.
j
j
0
0.2
0.2
1.15
1.215 GHz
f (GHz)
0.5
0.5
0.2
MGL052
1.25
0.960 GHz
0.5
1
6
1
1
handbook, halfpage
Fig.5
(%)
2
C
50
45
40
0.95
Collector efficiency as a function of
frequency; (In broadband test circuit as
shown in Fig.3).
5
2
2
10
MGL049
1.05
5
5
10
10
1.15
MZ0912B50Y
Product specification
f (GHz)
MGL053
1.25