MZ0912B50Y,114 NXP Semiconductors, MZ0912B50Y,114 Datasheet

TRANSISTOR POWER NPN SOT443A

MZ0912B50Y,114

Manufacturer Part Number
MZ0912B50Y,114
Description
TRANSISTOR POWER NPN SOT443A
Manufacturer
NXP Semiconductors
Datasheet
1.MZ0912B50Y114.pdf (12 pages)

Specifications of MZ0912B50Y,114

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.215GHz
Gain
8dB
Power - Max
150W
Current - Collector (ic) (max)
3A
Mounting Type
Surface Mount
Package / Case
SOT-443A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Noise Figure (db Typ @ F)
-
Other names
933994040114
MZ0912B50Y TRAY
MZ0912B50Y TRAY
Product specification
Supersedes data of November 1994
DATA SHEET
MZ0912B50Y
NPN microwave power transistor
DISCRETE SEMICONDUCTORS
1997 Feb 18

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MZ0912B50Y,114 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 ...

Page 2

Philips Semiconductors NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance ...

Page 3

Philips Semiconductors NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V collector-emitter voltage CES V emitter-base voltage EBO I collector current (DC) ...

Page 4

Philips Semiconductors NPN microwave power transistor THERMAL CHARACTERISTICS T = 125 C unless otherwise specified. j SYMBOL R thermal resistance from junction to mounting base th j-mb R thermal resistance from mounting base to heatsink th mb-h Z thermal impedance ...

Page 5

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 0.635 handbook, full pagewidth Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 2 ...

Page 6

Philips Semiconductors NPN microwave power transistor 70 handbook, halfpage 0. Fig.4 Load power as a function of frequency; (In broadband test circuit ...

Page 7

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 0 Fig.7 Input impedance as a function of frequency, associated with optimum load impedance. ...

Page 8

Philips Semiconductors NPN microwave power transistor PACKAGE OUTLINE handbook, full pagewidth 0.1 3.5 2.9 X 3.4 3.2 Dimensions in mm. Torque on screw: Max. 0.5 Nm. Recommended screw: M3. 1997 Feb 18 24 max 0 seating plane Y ...

Page 9

Philips Semiconductors NPN microwave power transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

Page 10

Philips Semiconductors NPN microwave power transistor 1997 Feb 18 NOTES 10 Product specification MZ0912B50Y ...

Page 11

Philips Semiconductors NPN microwave power transistor 1997 Feb 18 NOTES 11 Product specification MZ0912B50Y ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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