MZ0912B50Y,114 NXP Semiconductors, MZ0912B50Y,114 Datasheet - Page 5

• Manufacturer Part Number: MZ0912B50Y,114
• Description: TRANSISTOR POWER NPN SOT443A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B50Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 8dB
• Power - Max: 150W
• Current - Collector (ic) (max): 3A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994040114; MZ0912B50Y TRAY; MZ0912B50Y TRAY

Philips Semiconductors
1997 Feb 18
handbook, full pagewidth
handbook, full pagewidth
NPN microwave power transistor
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
mm
40
0.635
9
2
6.5
4.5
30 mm
L1
L2
2.5
Fig.3 Broadband test circuit.
3
12
C3
9
5
5
5
10
C5
3
30 mm
C2
20
0.635
9
11
L3
2
C4
V CC
3
MCD634
1
MGL064
2
C1
MZ0912B50Y
mm
40
Product specification