AT-64020 Avago Technologies US Inc., AT-64020 Datasheet - Page 3

• Manufacturer Part Number: AT-64020
• Description: TRANS NPN BIPO 20V 200MA 200-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-64020

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Power - Max: 3W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 110mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (200 mil BeO)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 20V
• Power Dissipation Pd: 3W
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 50
• No. Of Pins: 4
• Peak Reflow Compatible (260 C): Yes
• Number Of Elements: 1
• Collector-emitter Voltage: 20V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 20
• Power Dissipation: 3W
• Frequency (max): 4GHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Package Type: BeO
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 516-1861; AT-64020

AT-64020 Typical Performance, T
Typical Scattering Parameters,
A model for this device is available in the DEVICE MODELS section.
3
Figure 1. Power Output @ 1 dB Gain Compression vs.
Frequency and Collector Current. V
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
V
CE
30
29
28
27
26
25
35
30
25
20
15
10
= 16 V, I
5
0
1.0
Freq.
GHz
0.1
0.5
1.0
1.5
.0
.5
3.0
3.5
4.0
4.5
5.0
C
0.1
= 110 mA.
FREQUENCY (GHz)
FREQUENCY (GHz)
2.0
0.3
Mag.
.61
.75
.75
.74
.74
.73
.73
.74
.73
.7
.71
0.5
MSG
|S
3.0
21E
1.0
S
11
CE
|
2
= 16 V.
Ang.
-116
-173
171
159
148
141
130
119
107
4.0
93
79
MAG
150 mA
110 mA
70 mA
3.0 5.0
MSG
A
Common Emitter, Z
= 25°C
30.0
18.4
1.5
9.
7.0
5.
3.8
.7
1.8
0.9
0.1
dB
Figure 2. 1 dB Compressed Gain vs. Frequency and
Collector Current. V
15
12
9
6
3
1.0
O
Mag.
31.51
8.7
4.3
.90
.3
1.8
1.56
1.37
1.3
1.11
1.01
= 50 Ω, T
S
21
FREQUENCY (GHz)
CE
2.0
A
= 16 V.
= 5°C, V
Ang.
130
-16
-30
-43
86
66
50
35
6
1
-
3.0
CE
= 16 V, I
4.0
150 mA
110 mA
-33.1
-8.8
-7.4
-3.5
-1.6
-19.8
-17.5
-16.1
-14.7
-13.3
-11.8
70 mA
dB
C
= 110 mA
Mag.
.0
.036
.043
.067
.083
.103
.133
.157
.186
.17
.56
S
12
Figure 3. Output Power and E ciency vs. Input Power.
V
CE
30
25
20
15
10
= 16 V, I
5
0
0
Ang.
57
41
49
48
46
47
41
35
6
18
C
8
5
= 110 mA, f = 4.0 GHz.
POWER IN (dBm)
10
Mag.
15
.67
.3
.0
.1
.5
.7
.3
.35
.38
.41
.4
20
S
22
Ang.
-100
-110
-10
-17
-135
-146
-158
-168
179
-48
-88
25
P
η
OUT
T
40
30
20
10
0