AT-32063-TR1G Avago Technologies US Inc., AT-32063-TR1G Datasheet

IC TRANS NPN BIPOLAR SOT-363

AT-32063-TR1G

Manufacturer Part Number
AT-32063-TR1G
Description
IC TRANS NPN BIPOLAR SOT-363
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of AT-32063-TR1G

Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
5.5V
Noise Figure (db Typ @ F)
1.1dB ~ 1.4dB @ 900MHz
Gain
12.5dB ~ 14.5dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 2.7V
Current - Collector (ic) (max)
32mA
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
5.5V
Transition Frequency Typ Ft
10GHz
Power Dissipation Pd
150mW
Dc Collector Current
32mA
Dc Current Gain Hfe
50
Number Of Elements
2
Collector-emitter Voltage
5.5V
Collector-base Voltage
11V
Emitter-base Voltage
1.5V
Collector Current (dc) (max)
32mA
Dc Current Gain (min)
50
Power Dissipation
150mW
Frequency (max)
10GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
516-1567-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-32063-TR1G
Manufacturer:
NIKKAI
Quantity:
3 726
Part Number:
AT-32063-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Company:
Part Number:
AT-32063-TR1G
Quantity:
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AT-32063
Low Current, High Performance NPN Silicon Bipolar Transistor
Data Sheet
Description
The AT-32063 contains two high performance NPN bipolar
transistors in a single SOT-363 package. The devices are
unconnected, allowing flexibility in design. The pin-out
is convenient for cascode amplifier designs. The SOT-363
package is an industry standard plastic surface mount
package.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of the transistor yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields a transistor that is easy to match to and extremely
fast, with moderate power, low noise resistance, and low
operating currents.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated
systems as an LNA, gain stage, buffer, oscillator, or active
mixer. Typical amplifier designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more associated gain at a 2.7
V, 5 mA bias, with noise performance being relatively
insensitive to input match. High gain capability at 1 V, 1
mA makes this device a good fit for 900 MHz pager ap-
plications. Voltage breakdowns are high enough for use
at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz f
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device unifor-
mity, performance and reliability are produced by the use
of ion-implantation, self-alignment techniques, and gold
metallization in the fabrication of these devices.
t
, 30 GHz f
max
Features
• High Performance Bipolar Transistor Optimized for
• 900 MHz Performance: 1.1 dB NF, 14.5 dB G
• Characterized for End-of-Life Battery Use (2.7 V)
• SOT-363 (SC-70) Plastic Package
• Tape-and-Reel Packaging Option Available
• Lead-free
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
B
E
C
Low Current, Low Voltage Operation
1
1
2
1
2
3
6
5
4
C
E
B
2
1
2
A

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AT-32063-TR1G Summary of contents

Page 1

... Optimized performance at 2.7 V makes this device ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with more associated gain bias, with noise performance being relatively insensitive to input match. High gain capability makes this device a good fit for 900 MHz pager ap- plications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Avago’ ...

Page 2

... L = 450 TEST CIRCUIT BOARD MATERIAL = 0.047 GETEK (e = 4.3) DIMENSIONS IN MILS NOT TO SCALE Figure 1. Test circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. 2 [1] Absolute Units Maximum V 1 ...

Page 3

... Frequency and Current 2 0.5 1.0 1.5 2.0 FREQUENCY (GHz) = Figure 6. Third Order Intercept vs. Frequency and Bias 2.7 V, with Optimal Tuning. CE Units f = 0.9 GHz dBm f = 0.9 GHz 0.9 GHz dBm 2.4 0.9 1.8 FREQUENCY (GHz) Figure 4. Power Gain Compression vs. Frequency 2.7 V and mA 2.5 Typ 2.4 ...

Page 4

... MSG 15 10 MAG 5 S21 0 -5 0.1 1.1 2.1 3.1 FREQUENCY (GHz) Figure 7. Gain vs. Frequency 2 Mag Ang Mag 0.014 82 0.98 0.055 59 0.87 0.076 48 0.76 0.079 47 0.74 0.091 44 0.69 0.099 45 0.67 0.104 46 0 ...

Page 5

... MSG 20 15 MAG 10 S21 5 0 0.1 1.1 2.1 3.1 FREQUENCY (GHz) Figure 9. Gain vs. Frequency 2 2 Mag Ang Mag 0.010 74 0.83 0.035 72 0.56 0.059 72 0.53 0.065 71 0.53 0.095 68 0.52 0.114 66 0.53 0.126 64 0 ...

Page 6

... MSG 20 15 MAG 10 S21 5 0 0.1 1.1 2.1 3.1 FREQUENCY (GHz) Figure 11. Gain vs. Frequency Mag Ang Mag 0.01 75 0.86 0.03 72 0.6 0.05 72 0.57 0.06 71 0.57 0.09 69 0.57 0.10 66 0.57 0. ...

Page 7

... Ordering Information Part Numbers No. of Devices AT-32063-BLKG 100 AT-32063-TR1G 3000 AT-32063-TR2G 10000 Package Dimensions Outline 63 (SOT-363/SC-70 Device Orientation REEL USER FEED DIRECTION COVER TAPE 7 Comments Bulk 7" Reel 13" Reel L c DIMENSIONS (mm) SYMBOL MIN. MAX. E 1.15 1.35 D 1.80 2.25 HE 1.80 2. ...

Page 8

... For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-2645EN ...

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