AT-64020 Avago Technologies US Inc., AT-64020 Datasheet - Page 2

• Manufacturer Part Number: AT-64020
• Description: TRANS NPN BIPO 20V 200MA 200-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-64020

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Power - Max: 3W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 110mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (200 mil BeO)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 20V
• Power Dissipation Pd: 3W
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 50
• No. Of Pins: 4
• Peak Reflow Compatible (260 C): Yes
• Number Of Elements: 1
• Collector-emitter Voltage: 20V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 20
• Power Dissipation: 3W
• Frequency (max): 4GHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Package Type: BeO
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 516-1861; AT-64020

AT-64020 Absolute Maximum Ratings
Electrical Specifications, T
Note:
1. ηT = (RF Output Power)/(RF Input Power + VCEIC).

Symbol
|S
P
G
η
h
I
I
CBO
EBO
1 dB
T
FE
1 dB
1E
Symbol
V
V
V
T
|
P
EBO
CBO
CEO
I
T
STG

C
T
j
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Total Efficiency at 1 dB Compression:
V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
CE
CE
= 16 V, I
= 16 V, I
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
C
C
= 110 mA
= 110 mA
Parameters and Test Conditions
A
= 25°C
CE
EB
CE
CB
= 16 V, I
= 16 V, I
= 1 V
= 16 V
[,3]
CE
C
= 8 V, I
C
= 110 mA
= 110 mA
C
= 110 mA
[1]
Units
mA
W
°C
°C
V
V
V
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f= 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = 4.0 GHz
Maximum
-65 to 00
Absolute
00
00
40
0

3
[1]
Units
dBm
—
dB
dB
µA
µA
%
Thermal Resistance
Notes:
1. Permanent damage may occur if any of
2. Tcase = 25°C.
3. Derate at 25 mW/°C for Tc > 80°C.
4. The small spot size of this technique results
θ
jc
these limits are exceeded.
in a higher, though more accurate determi-
nation of θjc than do alternate methods.
See MEASUREMENTS section “Thermal Re-
sistance” for more information.
= 40°C/W
Min.
6.5
8.5
0
[2,4]
:
7.5
6.5
10.0
35.0
Typ.
7.0
.0
6.5
50
Max.
00
100
5.0