AT-42035G Avago Technologies US Inc., AT-42035G Datasheet

TRANS NPN BIPO 12V 80MA 35-SMD

AT-42035G

Manufacturer Part Number
AT-42035G
Description
TRANS NPN BIPO 12V 80MA 35-SMD
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of AT-42035G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 2GHz ~ 4GHz
Gain
10dB ~ 13.5dB
Power - Max
600mW
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 35mA, 8V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Package / Case
4-SMD (35 micro-X)
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
12V
Transition Frequency Typ Ft
8GHz
Power Dissipation Pd
600mW
Dc Collector Current
800mA
Dc Current Gain Hfe
270
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
516-1858
AT-42035G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-42035G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-42035
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Avago Technologies' AT-42035 is a general purpose NPN bipo-
lar transistor that offers excellent high frequency performance.
The AT-42035 is housed in a cost effective surface mount 100
mil micro-X package. The 4 micron emitter-to-emitter pitch
enables this transistor to be used in many different functions.
The 20 emitter finger interdigitated geometry yields a medium
sized transistor with impedances that are easy to match for low
noise and medium power applications. This device is designed
for use in low noise, wideband amplifier, mixer and oscilla-
tor applications in the VHF, UHF, and microwave frequencies.
An optimum noise match near 50 Ω up to 1 GHz, makes this
device easy to use as a low noise amplifier.
The AT-42035 bipolar transistor is fabricated using Avago’s
10 GHz f
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and gold
metalization in the fabrication of this device.
T
Self-Aligned-Transistor (SAT) process. The die is
Features
• High Gain at 1 dB Compression:
• Low Noise Figure:
• High Gain-Bandwidth Product: 8.0 GHz Typical f
• Cost Effective Ceramic Microstrip Package
35 micro-X Package
High Output Power:
21.0 dBm Typical P
20.5 dBm Typical P
14.0 dB Typical G
9.5 dB Typical G
1.9 dB Typical NF
1 dB
O
1 dB
1 dB
1 dB
at 2.0 GHz
at 4.0 GHz
at 2.0 GHz
at 4.0 GHz
at 2.0 GHz
T

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AT-42035G Summary of contents

Page 1

... This device is designed for use in low noise, wideband amplifier, mixer and oscilla- tor applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω GHz, makes this device easy to use as a low noise amplifier. The AT-42035 bipolar transistor is fabricated using Avago’s 10 GHz f Self-Aligned-Transistor (SAT) process ...

Page 2

... Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θ than do alternate methods. See MEASUREMENTS section jc “Thermal Resistance” for more information. ...

Page 3

... I (mA) C Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency 0.5 1.0 2.0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency mA 1dB 1dB (mA) C Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage 2.0 GHz. ...

Page 4

... A model for this device is available in the DEVICE MODELS section. AT-42035 Noise Parameters Freq GHz dB 0.1 1.0 0.5 1.1 1.0 1.3 2.0 2.0 4 Mag ...

Page 5

... Ordering Information Part Numbers No. of Devices AT-42035G 100 35 micro-X Package Dimensions 4 EMITTER .085 2.15 BASE COLLECTOR 016 EMITTER .057 .010 .100 1.45 .25 2.54 .022 .455 .030 .56 11.54 .75 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. ...

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