BFG540/X,215 NXP Semiconductors, BFG540/X,215 Datasheet - Page 5

• Manufacturer Part Number: BFG540/X,215
• Description: TRANS NPN 15V 9GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG540/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1983-2; 934018850215; BFG540/X T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
Fig.5
(mW)
C
P
CE
= 0; f = 1 MHz.
tot
(pF)
C re
600
400
200
0.8
0.6
0.4
0.2
0
1
0
10 V.
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.3 Power derating curve.
50
4
100
8
150
V CB (V)
T
s
MBG249
(
MRA750
o
C)
200
Rev. 05 - 21 November 2007
12
handbook, halfpage
handbook, halfpage
V
Fig.4
f = 1 GHz; T
Fig.6
(GHz)
CE
f T
h FE
250
200
150
100
= 8 V; T
50
12
0
10
8
4
0
10
2
1
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
amb
j
= 25 C.
= 25 C.
10
1
1
BFG540; BFG540/X;
1
10
Product specification
BFG540/XR
10
I C (mA)
V CE = 8 V
V CE = 4 V
I C (mA)
MRA749
MRA751
5 of 14
10
10
2
2