BFG540/X,215 NXP Semiconductors, BFG540/X,215 Datasheet - Page 3

• Manufacturer Part Number: BFG540/X,215
• Description: TRANS NPN 15V 9GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG540/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1983-2; 934018850215; BFG540/X T/R

NXP Semiconductors
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
V
V
I
P
h
C
f
G
F
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
SYMBOL
C
T
s
C
FE
stg
j
CBO
CES
tot
CBO
CES
EBO
tot
re
th j-s
NPN 9 GHz wideband transistor
UM
21
2
s
s
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
insertion power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
PARAMETER
open emitter
R
T
I
I
I
T
I
T
I
T
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
open emitter
R
open collector
T
Rev. 05 - 21 November 2007
C
C
C
C
C
C
s
amb
amb
amb
amb
s
s
s
s
BE
BE
= 40 mA; V
= 0; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
=
=
=
= 0
= 0
60 C; note 1
60 C; note 1
= 25 C
= 25 C
= 25 C
= 25 C
opt
opt
opt
CE
; I
; I
; I
C
C
C
= 8 V; f = 1 MHz
CONDITIONS
= 10 mA; V
= 40 mA; V
= 10 mA; V
amb
CE
CE
CE
CE
CE
amb
amb
CONDITIONS
= 25 C
= 8 V; T
= 8 V; f = 1 GHz;
= 8 V; f = 900 MHz;
= 8 V; f = 2 GHz;
= 8 V; f = 900 MHz;
T
= 25 C
= 25 C
s
60 C; note 1
CE
CE
CE
j
CONDITIONS
= 25 C
= 8 V;
= 8 V;
= 8 V;
BFG540; BFG540/X;
100
15
MIN.
120
0.5
9
18
11
16
1.3
1.9
2.1
TYP.
MIN.
65
VALUE
Product specification
290
BFG540/XR
20
15
120
400
250
1.8
2.4
20
15
2.5
120
400
+150
150
MAX.
MAX.
3 of 14
UNIT
K/W
V
V
mA
mW
pF
GHz
dB
dB
dB
dB
dB
dB
V
V
V
mA
mW
UNIT
UNIT
C
C