BFG540/X,215 NXP Semiconductors, BFG540/X,215 Datasheet - Page 12

• Manufacturer Part Number: BFG540/X,215
• Description: TRANS NPN 15V 9GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG540/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1983-2; 934018850215; BFG540/X T/R

NXP Semiconductors
Plastic surface mounted package; reverse pinning; 4 leads
NPN 9 GHz wideband transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143R
1.1
0.9
A
max
0.1
A 1
3
2
y
0.48
0.38
b p
IEC
0.88
0.78
b 1
e 1
D
e
0.15
0.09
c
JEDEC
3.0
2.8
D
b 1
REFERENCES
b p
0
Rev. 05 - 21 November 2007
1.4
1.2
E
4
1
1.9
w
e
SC-61B
B
scale
M
EIAJ
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
A
0.55
0.25
L p
A 1
0.45
0.25
Q
BFG540; BFG540/X;
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
L p
Q
Product specification
BFG540/XR
0.1
y
A
ISSUE DATE
97-03-10
99-09-13
12 of 14
c
SOT143R
X