BFG424F,115 NXP Semiconductors, BFG424F,115 Datasheet - Page 8

• Manufacturer Part Number: BFG424F,115
• Description: TRANS NPN 4.5V 25GHZ SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG424F,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 23dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 25mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1981-2; 934059126115; BFG424F T/R

Philips Semiconductors
BFG424F_1
Product data sheet
Fig 11. Common emitter forward transmission coefficient (s
Fig 12. Common emitter input reflection coefficient (s
V
V
CE
CE
= 2 V; I
= 2 V; I
180
180
C
C
= 25 mA
= 25 mA; Z
50
0
Rev. 01 — 21 March 2006
100 MHz
+0.2
135
135
135
135
0.2
40
o
0.2
= 50
30
+0.5
0.5
20
0.5
10
12 GHz
12 GHz
+1
90
90
90
90
0
1
1
2
22
NPN 25 GHz wideband transistor
); typical values
+2
2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
21
5
100 MHz
); typical values
45
45
45
45
10
001aad828
001aad827
+5
5
0
0
BFG424F
1.0
0.8
0.6
0.4
0.2
0
1.0
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