BFG424F,115 NXP Semiconductors, BFG424F,115 Datasheet

TRANS NPN 4.5V 25GHZ SOT343

BFG424F,115

Manufacturer Part Number
BFG424F,115
Description
TRANS NPN 4.5V 25GHZ SOT343
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG424F,115

Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain
23dB
Power - Max
135mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 25mA, 2V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
50
Dc Current Gain Hfe Max
50 @ 25mA @ 2V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
25 GHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
25 mA
Power Dissipation
135 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1981-2
934059126115
BFG424F T/R
1. Product profile
CAUTION
MSC895
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343F package.
Table 1:
Symbol
V
V
I
P
C
CBO
CEO
tot
BFG424F
NPN 25 GHz wideband transistor
Rev. 01 — 21 March 2006
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
Radio Frequency (RF) front end wideband applications such as:
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVison (SATV) tuners
high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)
Parameter
collector-base voltage
collector-emitter voltage open base
collector current
total power dissipation
Quick reference data
Conditions
open emitter
T
sp
90 C
Product data sheet
[1]
Min
-
-
-
-
Typ
-
-
25
-
Max
10
4.5
30
135
Unit
V
V
mA
mW

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BFG424F,115 Summary of contents

Page 1

BFG424F NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device ...

Page 2

Philips Semiconductors Table 1: Symbol CBS p(max [2] G p(max) Figure 2. Pinning information Table 2: Pin Ordering information Table 3: Type number BFG424F 4. ...

Page 3

Philips Semiconductors 5. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot T stg the temperature at the soldering ...

Page 4

Philips Semiconductors 7. Characteristics Table unless otherwise specified. j Symbol Parameter V (BR)CBO V (BR)CEO V (BR)EBO I CBO CES C EBS C CBS p(max ...

Page 5

Philips Semiconductors (mA ( 400 350 300 250 ...

Page 6

Philips Semiconductors (GHz GHz amb Fig 5. Transition frequency as a function of collector current; typical values 30 G (dB) ...

Page 7

Philips Semiconductors Fig 9. Common emitter input reflection coefficient (s Fig 10. Common emitter reverse transmission coefficient (s BFG424F_1 Product data sheet 135 +0.5 +0.2 0 0.2 0.5 180 0.2 0.5 135 mA; ...

Page 8

Philips Semiconductors Fig 11. Common emitter forward transmission coefficient (s Fig 12. Common emitter input reflection coefficient (s BFG424F_1 Product data sheet 135 100 MHz 180 135 ...

Page 9

Philips Semiconductors 7.1 Noise data Table typical values (MHz) 900 2000 ( GHz ( 900 MHz Fig 13. Minimum noise figure as a function of collector current; typical ...

Page 10

Philips Semiconductors 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT max 0.75 0.4 0.7 0.25 mm ...

Page 11

Philips Semiconductors 9. Revision history Table 9: Revision history Document ID Release date BFG424F_1 20060321 BFG424F_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 21 March 2006 BFG424F NPN 25 GHz wideband transistor ...

Page 12

Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 13

Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...

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