BFG424F,115 NXP Semiconductors, BFG424F,115 Datasheet - Page 6

• Manufacturer Part Number: BFG424F,115
• Description: TRANS NPN 4.5V 25GHZ SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG424F,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 23dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 25mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1981-2; 934059126115; BFG424F T/R

Philips Semiconductors
BFG424F_1
Product data sheet
Fig 5. Transition frequency as a function of collector
Fig 7. Gain as a function of collector current; typical
(GHz)
(dB)
f
G
T
30
20
10
30
20
10
0
0
V
current; typical values
V
values
1
1
CE
CE
= 2 V; f = 2 GHz; T
= 2 V; f = 2 GHz; T
MSG
10
10
amb
amb
s
21
= 25 C
= 25 C
2
G
p(max)
I
I
C
C
(mA)
(mA)
001aad821
001aad823
10
10
Rev. 01 — 21 March 2006
2
2
Fig 6. Gain as a function of collector current; typical
Fig 8. Gain as a function of frequency; typical values
(dB)
(dB)
G
G
30
20
10
45
35
25
15
0
5
5
10
V
values
V
1
CE
CE
1
= 2 V; f = 0.9 GHz; T
= 2 V; I
MSG
C
s
= 25 mA; T
21
NPN 25 GHz wideband transistor
2
1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
10
amb
amb
G
MSG
s
21
p(max)
= 25 C
2
= 25 C
10
I
C
BFG424F
(mA)
f (GHz)
001aad822
001aad824
10
10
2
2
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