AT-41532-TR1G Avago Technologies US Inc., AT-41532-TR1G Datasheet - Page 9

• Manufacturer Part Number: AT-41532-TR1G
• Description: IC TRANS NPN GP BIPOLAR SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41532-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Noise Figure (db Typ @ F): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
• Gain: 9dB ~ 15.5dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 225mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1569-2

AT-41532 Typical Scattering Parameters,
AT-41532 Typical Noise Parameters,
Common Emitter, Z
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
9
Freq.
GHz
0.5
0.75
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Freq.
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1 – |S
2*|S
S
S
11
21
12
21
|
12
2
S
Mag
0.402
0.304
0.255
0.225
0.227
0.256
0.301
0.359
0.414
0.457
0.496
0.531
0.573
0.633
0.696
| /|S
(k ±
11
– |S
| |S
F
dB
1.1
1.4
1.5
1.7
1.9
2.2
2.4
min
12
21
√
22
|
|
k
|
2
2
O
–1)
+ |D|
= 50 Ω, V
Ang
-98
-124
-147
178
151
111
79
53
36
22
10
-4
-19
-28
-38
2
; D = S
Γ
Mag
0.29
0.41
0.44
0.53
0.60
0.67
0.71
opt
CE
= 5 V, I
11
dB
17.27
14.42
12.25
9.09
6.92
4.06
2.22
0.92
-0.02
-0.60
-1.00
-1.42
-1.89
-2.40
-3.32
S
22
Common Emitter, Z
– S
C
Ang
110
-167
-153
-127
-106
-86
-70
= 5 mA
12
S
S
Mag
7.303
5.260
4.095
2.848
2.218
1.596
1.291
1.111
0.997
0.933
0.891
0.849
0.805
0.759
0.682
21
21
R
ohms
7.0
3.9
4.7
9.3
18.6
36.8
59.5
n
Ang
107
92
82
65
52
28
8
-10
-26
-40
-55
-70
-85
-95
-113
O
= 50 Ω, V
dB
-27.15
-25.04
-23.26
-20.23
-17.66
-13.38
-9.92
-7.07
-4.78
-2.97
-1.84
-1.37
-1.44
-2.03
-2.63
G
dB
14.8
11.3
10.5
9.3
8.4
7.5
6.7
assoc
CE
= 5 V, I
C
S
Mag
0.044
0.056
0.069
0.097
0.131
0.214
0.319
0.443
0.577
0.711
0.809
0.854
0.847
0.792
0.739
12
= 5 mA
25
20
15
10
-5
5
0
0
Figure 14. Gain vs. Frequency at 5 V, 5 mA.
Note: dB(|S
dB(S|2,1|)
Ang
60
61
63
66
65
59
48
33
16
-4
-26
-49
-69
-88
-105
gmax
1
k
FREQUENCY (GHz)
2
21
|) = 20 * log(|S
S
Mag
0.713
0.663
0.640
0.621
0.613
0.603
0.592
0.562
0.498
0.401
0.344
0.374
0.441
0.516
0.624
3
22
4
21
5
|)
Ang
-19
-21
-23
-28
-34
-51
-69
-92
-120
-156
154
105
67
38
8
6
1.2
1
0.8
0.6
0.4
0.2
0