AT-41532-TR1G Avago Technologies US Inc., AT-41532-TR1G Datasheet - Page 6

• Manufacturer Part Number: AT-41532-TR1G
• Description: IC TRANS NPN GP BIPOLAR SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41532-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Noise Figure (db Typ @ F): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
• Gain: 9dB ~ 15.5dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 225mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1569-2

AT-41532 Typical Scattering Parameters,
AT-41532 Typical Noise Parameters,
Common Emitter, Z
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
6
Freq.
GHz
0.5
0.75
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Freq.
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1 – |S
2*|S
S
S
11
21
12
21
|
12
2
S
Mag
0.400
0.312
0.270
0.247
0.253
0.280
0.323
0.379
0.434
0.480
0.522
0.557
0.595
0.662
0.709
| /|S
(k ±
11
– |S
| |S
F
dB
1.2
1.4
1.5
1.7
1.9
2.2
2.5
min
12
21
√
22
|
|
k
|
2
2
O
–1)
+ |D|
= 50 Ω, V
Ang
-102
-130
-152
175
149
112
80
55
38
24
10
-5
-19
-29
-39
2
; D = S
Γ
Mag
0.283
0.41
0.44
0.53
0.60
0.67
0.71
opt
CE
= 2.7 V, I
11
dB
17.03
14.15
11.97
8.82
6.67
3.86
2.07
0.80
-0.13
-0.72
-1.20
-1.64
-2.17
-2.38
-3.56
S
22
Common Emitter, Z
– S
Ang
106
-165
-151
-126
-106
-86
-69
C
12
= 5 mA
S
S
Mag
7.106
5.101
3.969
2.762
2.154
1.559
1.269
1.097
0.986
0.920
0.871
0.828
0.779
0.761
0.664
21
21
R
ohms
7.3
3.9
4.8
9.2
18.4
35.0
58.0
n
Ang
106
91
80
64
50
26
6
-12
-28
-43
-58
-72
-87
-99
-115
O
= 50 Ω, V
dB
-25.97
-23.86
-22.09
-19.10
-16.60
-12.48
-9.19
-6.55
-4.50
-2.96
-2.07
-1.73
-1.86
-2.43
-3.03
G
dB
14.0
10.7
9.8
8.5
7.5
6.6
5.8
assoc
CE
= 2.7 V, I
S
Mag
0.050
0.064
0.079
0.111
0.148
0.238
0.347
0.471
0.595
0.711
0.788
0.820
0.808
0.756
0.705
12
C
= 5 mA
25
20
15
10
-5
5
0
0
Figure 11. Gain vs. Frequency at 2.7 V, 5 mA.
Note: dB(|S
dB(S|2,1|)
Ang
59
60
61
63
62
55
43
27
9
-11
-32
-53
-73
-92
-107
gmax
1
k
FREQUENCY (GHz)
2
21
|) = 20 * log(|S
S
Mag
0.671
0.615
0.588
0.564
0.553
0.535
0.514
0.472
0.398
0.309
0.299
0.366
0.449
0.533
0.633
3
22
4
21
5
|)
Ang
-22
-24
-25
-30
-37
-54
-75
-99
-130
-174
131
87
55
27
3
6
1.2
1
0.8
0.6
0.4
0.2
0