AT-41532-TR1G Avago Technologies US Inc., AT-41532-TR1G Datasheet - Page 8

• Manufacturer Part Number: AT-41532-TR1G
• Description: IC TRANS NPN GP BIPOLAR SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41532-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Noise Figure (db Typ @ F): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
• Gain: 9dB ~ 15.5dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 225mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1569-2

AT-41532 Typical Scattering Parameters,
AT-41532 Typical Noise Parameters,
Common Emitter, Z
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
8
Freq.
GHz
0.5
0.75
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Freq.
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1 – |S
2*|S
S
S
11
21
12
21
|
12
2
S
Mag
0.659
0.540
0.456
0.387
0.371
0.387
0.428
0.472
0.494
0.490
0.489
0.506
0.541
0.634
0.670
| /|S
(k ±
11
– |S
| |S
F
dB
1.2
1.5
1.6
1.9
2.2
2.5
2.9
min
12
21
√
22
|
|
k
|
2
2
O
–1)
+ |D|
= 50 Ω, V
Ang
-79
-108
-131
-169
162
116
79
49
28
13
2
-10
-22
-33
-39
2
; D = S
Γ
Mag
0.35
0.48
0.51
0.60
0.65
0.70
0.74
opt
CE
= 5 V, I
11
dB
13.43
11.41
9.64
6.81
4.74
1.91
0.01
-1.31
-1.96
-1.95
-1.81
-1.84
-2.07
-2.46
-3.23
S
22
Common Emitter, Z
– S
C
Ang
100
178
-166
-137
-112
-92
-73
= 2 mA
12
S
S
Mag
4.696
3.720
3.034
2.190
1.726
1.247
1.001
0.860
0.798
0.799
0.812
0.810
0.788
0.754
0.689
21
21
R
ohms
8.5
3.4
3.7
8.8
21.7
44.6
79.5
n
Ang
121
103
89
69
53
27
7
-8
-20
-33
-48
-64
-80
-94
-109
O
= 50 Ω, V
dB
-25.16
-23.78
-23.06
-21.69
-19.63
-14.40
-9.89
-6.47
-4.05
-2.36
-1.51
-1.28
-1.51
-2.09
-2.75
G
dB
13.5
10.6
9.7
8.8
7.8
7.1
6.0
assoc
CE
= 5 V, I
C
S
Mag
0.055
0.065
0.070
0.082
0.104
0.191
0.320
0.475
0.627
0.762
0.840
0.863
0.841
0.786
0.729
12
= 2 mA
25
20
15
10
-5
5
0
0
Figure 13. Gain vs. Frequency at 5 V, 2 mA.
Note: dB(|S
dB(S|2,1|)
Ang
53
48
48
55
63
67
56
38
17
-5
-29
-51
-71
-90
-105
gmax
1
k
FREQUENCY (GHz)
2
21
|) = 20 * log(|S
S
Mag
0.836
0.774
0.738
0.705
0.694
0.685
0.673
0.635
0.556
0.448
0.388
0.408
0.462
0.539
0.625
3
22
4
21
5
|)
Ang
-18
-22
-24
-30
-37
-54
-75
-100
-131
-170
141
96
62
35
6
6
1.2
1
0.8
0.6
0.4
0.2
0