AT-41532-TR1G Avago Technologies US Inc., AT-41532-TR1G Datasheet - Page 2

• Manufacturer Part Number: AT-41532-TR1G
• Description: IC TRANS NPN GP BIPOLAR SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41532-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Noise Figure (db Typ @ F): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
• Gain: 9dB ~ 15.5dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 225mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1569-2

AT-41532 Absolute Maximum Ratings
Electrical Specifications, T
Characterization Information, T
2
Symbol
V
V
V
I
P
T
T
Symbol
I
I
Symbol
NF
G
P
G
IP
|S
C
h
CBO
EBO
j
STG
EBO
CBO
CEO
T
1dB
A
1dB
21E
FE
3
|
2
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Parameters and Test Conditions
Forward Current Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
Parameters and Test Conditions
Noise Figure
V
Associated Gain
V
Power at 1 dB Gain Compression (opt tuning)
V
Gain at 1 dB Gain Compression (opt tuning)
V
Output Third Order Intercept Point (opt tuning)
V
Gain in 50 Ω System
V
CE
CE
CE
CE
CE
CE
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
A
C
C
C
C
C
C
= 25°C
= 5 mA
= 5 mA
= 25 mA
= 25 mA
= 25 mA
= 5 mA
A
[2, 3]
= 25°C
Units
V
V
V
mA
mW
°C
°C
V
I
V
V
C
CE
CB
EB
= 5 mA
= 5 V,
= 1 V
= 3 V
Absolute
Maximum
1.5
20
12
50
225
150
-65 to 150
f = 0.9 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 0.9 GHz
Units
–
mA
mA
[1]
Min
30
Units
dB
dB
dBm
dB
dBm
dB
Notes:
1. Operation of this device above any one of
2. T
3. Derate at 2.86 mW/°C for T
these parameters may cause permanent
damage.
> 72°C.
MOUNTING SURFACE
Thermal Resistance
Typ
150
Min
12.5
q
jc
= 350°C/W
= 25°C.
MOUNTING SURFACE
Max
270
0.2
1.0
Typ
1.0
1.4
1.9
15.5
10.5
9.0
14.5
14.5
25
13.25
5.2
[2]: