BFS505,115 NXP Semiconductors, BFS505,115 Datasheet - Page 8

• Manufacturer Part Number: BFS505,115
• Description: TRANS NPN 15V 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS505,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1991-2; 934021370115; BFS505 T/R

NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
f = 900 MHz; Z
I
f = 2 GHz; Z
C
C
= 1.25 mA; V
= 1.25 mA; V
o
= 50 .
o
CE
CE
= 50 .
= 6 V;
= 6 V;
stability
circle
180°
180°
0
0
−135°
−135°
135°
135°
0.2
0.2
0.2
0.2
pot. unst.
region
0.2
0.2
0.5
0.5
0.5
0.5
Fig.12 Noise circle.
Fig.13 Noise circle.
0.5
0.5
−90°
−90°
90°
90°
8
1
1
1
1
1
1
F = 4 dB
F = 2.5 dB
F = 3 dB
F min = 1.9 dB
F = 3 dB
2
2
F min = 1. 2 dB
Γ OPT
F = 2 dB
F = 1.5 dB
Γ OPT
2
2
2
2
5
5
−45°
−45°
45°
45°
5
5
5
5
MRC073
MRC074
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFS505