BFS505,115 NXP Semiconductors, BFS505,115 Datasheet - Page 11

• Manufacturer Part Number: BFS505,115
• Description: TRANS NPN 15V 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS505,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1991-2; 934021370115; BFS505 T/R

NXP Semiconductors
PACKAGE OUTLINE
September 1995
NPN 9 GHz wideband transistor
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
1.3
e
w
B
M
0.65
B
e 1
JEITA
scale
SC-70
11
1
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
Product specification
X
v
ISSUE DATE
04-11-04
06-03-16
M
BFS505
A
SOT323