BFS505,115 NXP Semiconductors, BFS505,115 Datasheet

TRANS NPN 15V 9GHZ SOT323

BFS505,115

Manufacturer Part Number
BFS505,115
Description
TRANS NPN 15V 9GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFS505,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2.1dB @ 900MHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 5mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1991-2
934021370115
BFS505 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS505,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
DISCRETE SEMICONDUCTORS
DATA SHEET
BFS505
NPN 9 GHz wideband transistor
Product specification
September 1995

Related parts for BFS505,115

BFS505,115 Summary of contents

Page 1

DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS September 1995 ...

Page 2

... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES  Low current consumption  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability  SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope intended for low power amplifiers, ...

Page 3

... NXP Semiconductors NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V emitter-base voltage EBO I DC collector current C P total power dissipation tot T storage temperature stg T junction temperature j THERMAL RESISTANCE ...

Page 4

... NXP Semiconductors NPN 9 GHz wideband transistor CHARACTERISTICS = 25 C, unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C emitter capacitance e C collector capacitance c C feedback capacitance re f transition frequency T G maximum unilateral power gain UM (note 1) S  2 insertion power gain ...

Page 5

... NXP Semiconductors NPN 9 GHz wideband transistor 200 handbook, halfpage P tot (mW) 150 100 100 Fig.2 Power derating curve. 0.5 handbook, halfpage C re (pF) 0.4 0.3 0.2 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage. September 1995 MRC020 - 1 handbook, halfpage 150 200 MRC011 handbook, halfpage ...

Page 6

... NXP Semiconductors NPN 9 GHz wideband transistor In Figs maximum unilateral power gain; UM MSG = maximum stable gain; G gain. 25 handbook, halfpage gain (dB MSG  900 MHz amb Fig.6 Gain as a function of collector current. 50 handbook, halfpage gain (dB MSG 10 0 −2 −  1.25 mA amb Fig.8 Gain as a function of frequency. ...

Page 7

... NXP Semiconductors NPN 9 GHz wideband transistor 4 handbook, halfpage F (dB GHz 900 MHz 500 MHz 1 0 −  amb Fig.10 Minimum noise figure as a function of collector current. September 1995 MRC018 handbook, halfpage F (dB (mA Fig.11 Minimum noise figure as a function of 7 Product specification ...

Page 8

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth stability circle 180° 1.25 mA  900 MHz handbook, full pagewidth 180° 1.25 mA  GHz September 1995 pot. unst. 90° region 1 135° 0.5 0.2 0 0.5 −135° 1 −90° ...

Page 9

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA  Fig.14 Common emitter input reflection coefficient (S handbook, full pagewidth 180° mA Fig.15 Common emitter forward transmission coefficient (S September 1995 90° 1 135° 0.5 0.2 0.2 0 GHz 0.2 0.5 −135° ...

Page 10

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.16 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180° mA  Fig.17 Common emitter output reflection coefficient (S September 1995 90° 135° 3 GHz 40 MHz 0.5 0.4 0.3 0.2 0.1 − ...

Page 11

... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 September 1995 scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...

Page 12

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 13

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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