BFR520,215 NXP Semiconductors, BFR520,215 Datasheet - Page 6

• Manufacturer Part Number: BFR520,215
• Description: TRANS NPN 70MA 15V 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR520,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1648-2; 934018790215; BFR520 T/R

Philips Semiconductors
9397 750 13397
Product data sheet
Fig 7. Gain as a function of frequency; I
Fig 9. Minimum noise figure and associated available
gain
(dB)
F
(dB)
min
50
40
10
30
20
0
5
4
3
2
1
0
V
V
gain as functions of collector current.
10
1
CE
CE
2000
1000
900
500
= 6 V; I
= 6 V.
MSG
G
UM
F
min
C
= 5 mA.
10
2
10
G
ass
10
f (MHz)
3
I
C
1000
900
2000
(mA)
f (MHz)
G
max
C
mra708
mra714
= 5 mA.
Rev. 03 — 1 September 2004
10
10
4
20
15
10
0
5
2
5
G
(dB)
ass
Fig 8. Gain as a function of frequency; I
Fig 10. Minimum noise figure and associated available
gain
(dB)
F
(dB)
min
50
40
30
20
10
0
5
4
3
2
1
0
10
V
V
gain as functions of frequency.
10
CE
CE
2
= 6 V; I
= 6 V.
MSG
G
20
5
UM
F
I
min
C
(mA)
C
= 20 mA.
10
NPN 9 GHz wideband transistor
5
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
20
10
3
G
ass
10
3
f (MHz)
f (MHz)
G
BFR520
max
C
mra709
mra715
= 20 mA.
10
10
4
15
20
10
5
0
4
5
G
(dB)
ass
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