BFR520,215 NXP Semiconductors, BFR520,215 Datasheet - Page 4

• Manufacturer Part Number: BFR520,215
• Description: TRANS NPN 70MA 15V 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR520,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1648-2; 934018790215; BFR520 T/R

Philips Semiconductors
9397 750 13397
Product data sheet
Fig 1. Power derating curve.
(mW)
P
tot
400
300
200
100
0
0
50
Table 7:
T
[1]
[2]
Symbol Parameter
NF
P
ITO
j
L(1dB)
= 25 C unless otherwise specified.
G
I
Measured at f
100
C
UM
= 20 mA; V
is the maximum unilateral power gain, assuming s
G
noise figure
output power at
1 dB gain
compression
third order
intercept point
UM
Characteristics
150
=
CE
(2p q)
T
10
sp
= 6 V; R
mra702
( C)
= 898 MHz and f
log
Rev. 03 — 1 September 2004
200
----------------------------------------------------- dB.
L
1
= 50 ; T
Conditions
T
I
R
f = 900 MHz
C
…continued
–
s
amb
L
I
I
I
= 20 mA; V
=
C
C
C
= 50 ; T
s
= 5 mA; f = 900 MHz
= 20 mA; f = 900 MHz
= 5 mA; f = 2 GHz
11
= 25 C
opt
s
2
amb
(2q p)
; V
21
Fig 2. DC current gain as a function of collector
1
2
CE
= 25 C; f
–
amb
= 904 MHz.
CE
= 6 V;
h
s
FE
22
250
200
150
100
= 25 C;
= 6 V;
50
0
V
current.
2
10
CE
p
= 900 MHz; f
2
= 6 V.
12
is zero and
10
1
[2]
q
NPN 9 GHz wideband transistor
= 902 MHz
Min
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
Typ
1.1
1.6
1.9
17
26
10
I
BFR520
C
(mA)
mra703
Max
1.6
2.1
-
-
-
10
2
4 of 13
Unit
dB
dB
dB
dBm
dBm