BFR520,215 NXP Semiconductors, BFR520,215 Datasheet - Page 5

• Manufacturer Part Number: BFR520,215
• Description: TRANS NPN 70MA 15V 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR520,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1648-2; 934018790215; BFR520 T/R

Philips Semiconductors
9397 750 13397
Product data sheet
Fig 3. Feedback capacitance as a function of
Fig 5. Gain as a function of collector current;
gain
(dB)
(pF)
C
re
0.6
0.4
0.2
25
20
15
10
5
0
0
I
collector-base voltage.
V
f = 900 MHz.
C
0
0
CE
= 0 A; f = 1 MHz.
= 6 V; f = 900 MHz.
MSG
10
4
20
8
G
UM
V
I
C
CB
(mA)
(V)
G
mra704
mra706
max
Rev. 03 — 1 September 2004
12
30
Fig 4. Transition frequency as a function of collector
Fig 6. Gain as a function of collector current;
(GHz)
gain
(dB)
f
T
12
25
20
15
10
8
4
0
5
0
T
current.
V
f = 2 GHz.
10
0
amb
CE
1
= 6 V; f = 2 GHz.
= 25 C; f = 1 GHz.
10
1
NPN 9 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
G max
G UM
V
CE
10
20
= 6 V
3 V
I
C
I
C
BFR520
(mA)
(mA)
mra705
mra707
10
30
2
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