BFQ67,215 NXP Semiconductors, BFQ67,215 Datasheet - Page 6

• Manufacturer Part Number: BFQ67,215
• Description: TRANS NPN 50MA 10V 8GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFQ67,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1647-2; 933677740215; BFQ67 T/R

NXP Semiconductors
1998 Aug 27
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
V
Fig.10 Minimum noise figure as a function of
V
Fig.12 Minimum noise figure as a function of
CE
CE
(dB)
(dB)
F
F
= 8 V.
= 8 V.
4
4
3
2
0
3
2
0
1
1
10
1
collector current, typical values.
2
frequency, typical values.
10
10
3
I
I
15 mA
C
C
5 mA
f (MHz)
(mA)
= 30 mA
900 MHz
500 MHz
f = 2 GHz
1 GHz
MBB309
MBB308
100
10
4
6
handbook, halfpage
handbook, halfpage
V
Fig.11 Noise figure as a function of collector
V
Fig.13 Minimum noise figure as a function of
CE
CE
(dB)
(dB)
F
F
= 6 V; f = 900 MHz.
= 1 V.
5
4
3
2
1
0
5
4
3
2
1
0
10
1
2
current, typical values.
frequency, typical values.
10
10
3
I C = 0.5 mA
1 mA
2 mA
I C (mA)
f (MHz)
Product specification
Z S = 60 Ω
optimum
source
MRA612
MRA613
BFQ67
10
10
4
2