BFQ67,215 NXP Semiconductors, BFQ67,215 Datasheet - Page 3

• Manufacturer Part Number: BFQ67,215
• Description: TRANS NPN 50MA 10V 8GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFQ67,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1647-2; 933677740215; BFQ67 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1.
CHARACTERISTICS
T
Note
1. G
1998 Aug 27
R
I
h
C
C
C
f
G
F
j
CBO
T
SYMBOL
FE
SYMBOL
= 25 C unless otherwise specified.
NPN 8 GHz wideband transistor
th j-s
c
e
re
UM
T
UM
s
is the temperature at the soldering point of the collector lead.
is the maximum unilateral power gain, assuming S
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
PARAMETER
PARAMETER
I
I
I
I
I
I
I
T
I

T

T

T
I
T

T
I
T
E
C
E
C
C
C
C
C
C
C
s
s
s
s
amb
amb
amb
amb
amb
amb
amb
= 0; V
= 15 mA; V
= i
= i
= 0; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
= 15 mA; V
= 
= 
= 
= 
e
c
= 25 C; f = 1 GHz
= 25 C; f = 1 GHz
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
= 25 C; f = 2 GHz; Z
= 25 C; f = 2 GHz
= 25 C; f = 2 GHz; Z
opt
opt
opt
opt
= 0; V
= 0; V
CB
CB
; I
; I
; I
; I
3
C
C
C
C
12
= 5 V
= 8 V; f = 1 MHz
CONDITIONS
CB
EB
= 5 mA; V
= 15 mA; V
= 5 mA; V
= 15 mA; V
CE
is zero and
CE
CE
CE
CE
CE
= 0.5 V; f = 1 MHz
= 8 V; f = 1 MHz
= 8 V;
= 5 V
= 8 V
= 8 V;
= 8 V; f = 2 GHz
= 8 V;
note 1
CE
CE
CE
CE
= 8 V;
= 8 V;
G
CONDITIONS
s
s
= 8 V;
= 8 V;
UM
= 60 
= 60 
=
10 log

60












--------------------------------------------------------- - dB

MIN.
1
–
S
11

100
0.7
1.3
0.5
8
14
8
1.3
1.7
2.2
2.5
2.7
3
TYP. MAX.
VALUE
Product specification
S
2
260
 1
21

2
–
50













BFQ67
S
22
2
UNIT

K/W
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
UNIT
.