BFQ67,215 NXP Semiconductors, BFQ67,215 Datasheet

TRANS NPN 50MA 10V 8GHZ SOT23

BFQ67,215

Manufacturer Part Number
BFQ67,215
Description
TRANS NPN 50MA 10V 8GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFQ67,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.3dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 5V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 15mA @ 5V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.05 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1647-2
933677740215
BFQ67 T/R
Product specification
Supersedes data of September 1995
book, halfpage
DATA SHEET
BFQ67
NPN 8 GHz wideband transistor
DISCRETE SEMICONDUCTORS
M3D088
1998 Aug 27

Related parts for BFQ67,215

BFQ67,215 Summary of contents

Page 1

DATA SHEET book, halfpage BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 DISCRETE SEMICONDUCTORS M3D088 1998 Aug 27 ...

Page 2

... NXP Semiconductors NPN 8 GHz wideband transistor FEATURES  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability. APPLICATIONS Satellite TV tuners and RF portable communications equipment GHz. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO ...

Page 3

... NXP Semiconductors NPN 8 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j-s Note the temperature at the soldering point of the collector lead. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C collector capacitance ...

Page 4

... NXP Semiconductors NPN 8 GHz wideband transistor 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.2 Power derating curve. 0.8 handbook, halfpage C re (pF) 0.6 0.4 0 MHz Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. 1998 Aug 27 MRA614 handbook, halfpage h 150 200 ...

Page 5

... NXP Semiconductors NPN 8 GHz wideband transistor 25 handbook, halfpage gain (dB) 20 MSG GHz. CE Fig.6 Gain as a function of collector current, typical values. 50 handbook, halfpage gain (dB MSG mA Fig.8 Gain as a function of frequency, typical values. 1998 Aug 27 MRA611 handbook, halfpage G max (mA Fig.7 MRA608 handbook, halfpage ...

Page 6

... NXP Semiconductors NPN 8 GHz wideband transistor 4 handbook, halfpage F (dB Fig.10 Minimum noise figure as a function of collector current, typical values. 4 handbook, halfpage F (dB Fig.12 Minimum noise figure as a function of frequency, typical values. 1998 Aug 27 MBB308 handbook, halfpage GHz (dB) 1 GHz 900 MHz ...

Page 7

... NXP Semiconductors NPN 8 GHz wideband transistor handbook, full pagewidth + j −  mA Fig.14 Common emitter input reflection coefficient (S handbook, full pagewidth 180° mA Fig.15 Common emitter forward transmission coefficient (S 1998 Aug 27 1 0.5 0.2 3 GHz 0 0.2 0.5 1 90° 120° 150° ...

Page 8

... NXP Semiconductors NPN 8 GHz wideband transistor handbook, full pagewidth 180° mA Fig.16 Common emitter reverse transmission coefficient (S handbook, full pagewidth + j 0 −  mA Fig.17 Common emitter output reflection coefficient (S 1998 Aug 27 90° 120° 150° 40 MHz 0.2 0.1 150° ...

Page 9

... NXP Semiconductors NPN 8 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 1998 Aug scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 10

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 11

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 12

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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