BFR92A,215 NXP Semiconductors, BFR92A,215 Datasheet - Page 5

• Manufacturer Part Number: BFR92A,215
• Description: TRANS NPN 25MA 15V 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR92A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 40
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1650-2; 933551560215; BFR92A T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
I
Fig.5
V
MSG = maximum stable gain;
G
Fig.7
C
CE
UM
(pF)
= i
gain
(dB)
C c
0.8
0.6
0.4
0.2
= 10 V; f = 500 MHz.
30
20
10
c
= maximum unilateral power gain.
0
1
0
= 0; f = 1 MHz; T
0
0
Collector capacitance as a function of
collector-base voltage; typical values.
Gain as a function of collector current;
typical values.
5
5
j
= 25 C.
10
10
15
15
G UM
MSG
20
V CB (V)
I C (mA)
MBB274
MBB278
20
25
Rev. 04 - 2 March 2009
handbook, halfpage
handbook, halfpage
V
Fig.6
V
MSG = maximum stable gain;
G
Fig.8
(GHz)
CE
CE
UM
f T
gain
(dB)
= 10 V; f = 500 MHz; T
= 10 V; f = 1 GHz.
30
20
10
= maximum unilateral power gain.
0
6
4
2
0
0
0
Transition frequency as a function of
collector current; typical values.
Gain as a function of collector current;
typical values.
5
10
amb
10
= 25 C.
15
20
G UM
MSG
Product specification
I
C
20
I
(mA)
C
BFR92A
MBB275
MBB279
(mA)
5 of 12
30
25