BFR92A,215 NXP Semiconductors, BFR92A,215 Datasheet - Page 2

• Manufacturer Part Number: BFR92A,215
• Description: TRANS NPN 25MA 15V 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR92A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 40
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1650-2; 933551560215; BFR92A T/R

NXP Semiconductors
FEATURES
APPLICATIONS
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
V
V
I
P
C
f
G
F
V
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
stg
j
High power gain
Low noise figure
Low intermodulation distortion.
RF wideband amplifiers and
oscillators.
CBO
CEO
tot
O
CBO
CEO
EBO
tot
re
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
PINNING
PIN
1
2
3
Rev. 04 - 2 March 2009
base
emitter
collector
T
I
I
I
T
I
T
I
d
R
open emitter
open base
open collector
T
C
C
C
C
C
im
s
amb
amb
s
s
L
= i
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
=
= 75 ; f
= 60 dB; I
95 C
95 C; note 1; see Fig.3
c
= 25 C
= 25 C
DESCRIPTION
opt
= 0; V
; T
amb
p
CE
CE
CONDITIONS
CONDITIONS
+ f
CE
CE
CE
C
= 25 C
= 10 V; f = 1 MHz
= 10 V; f = 1 GHz;
q
= 14 mA; V
= 10 V; f = 500 MHz
= 10 V; f = 1 GHz;
= 10 V; f = 2 GHz;
f
r
= 793.25 MHz
CE
= 10 V;
page
Marking code: P2%.
0.35
5
14
8
2.1
150
Top view
1
65
MIN.
TYP.
Fig.1 SOT23.
Product specification
20
15
25
300
20
15
2
25
300
+150
175
MAX.
MAX.
3
MSB003
BFR92A
2
2 of 12
V
V
mA
mW
pF
GHz
dB
dB
dB
mV
V
V
V
mA
mW
C
C
UNIT
UNIT