BLF4G10-160,112 NXP Semiconductors, BLF4G10-160,112 Datasheet - Page 6

• Manufacturer Part Number: BLF4G10-160,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10-160,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 894MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058737112; BLF4G10-160; BLF4G10-160

NXP Semiconductors
BLF4G10-160_1
Product data sheet
Fig 9. CDMA power gain and drain efficiency as
Fig 11. CDMA ACPR at 750 kHz and at 1980 kHz as functions of average load power; typical values, measured in a
(dB)
G
p
20
19
18
17
16
V
Test signal: IS-95 with PAR = 9.9 dB at 0.01 %
probability.
functions of average load power; typical values,
measured in a CDMA demo test circuit
V
CDMA demo test circuit
28
DS
DS
= 28 V; I
= 28 V; I
32
Dq
Dq
= 1100 mA; f = 881.5 MHz.
= 1100 mA; T
36
G
D
p
40
ACPR
case
(dBc)
35
45
55
65
75
= 25 C; f = 881.5 MHz.
28
P
44
L(AV)
001aag554
(dBm)
32
48
Rev. 01 — 22 June 2007
40
30
20
10
0
ACPR
ACPR
(%)
D
1980
36
750
Fig 10. CDMA power gain as a function of average load
40
(dB)
(1) f = 869 MHz.
(2) f = 881.5 MHz.
(3) f = 894 MHz.
G
p
20
19
18
17
16
V
power at various frequencies; typical values,
measured in a CDMA demo test circuit
28
DS
P
44
L(AV)
001aag556
= 28 V; I
(dBm)
32
48
1
2
3
Dq
= 1100 mA.
36
UHF power LDMOS transistor
BLF4G10-160
40
© NXP B.V. 2007. All rights reserved.
P
44
L(AV)
001aag555
(dBm)
48
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