BLF4G10-160,112 NXP Semiconductors, BLF4G10-160,112 Datasheet - Page 5

• Manufacturer Part Number: BLF4G10-160,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10-160,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 894MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058737112; BLF4G10-160; BLF4G10-160

NXP Semiconductors
BLF4G10-160_1
Product data sheet
Fig 5. GSM EDGE power gain and drain efficiency as
Fig 7. GSM EDGE rms EVM and peak EVM as
EVM
(dB)
(%)
G
p
21
20
19
18
17
16
16
12
8
4
0
V
f = 894 MHz.
functions of average load power; typical values
V
f = 894 MHz.
functions of average load power; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
G
D
p
20
20
Dq
Dq
= 900 mA; T
= 900 mA; T
40
40
EVM
60
60
case
EVM
case
rms
= 25 C;
= 25 C;
M
80
80
P
P
001aag550
001aag552
L(AV)
L(AV)
(W)
(W)
100
100
Rev. 01 — 22 June 2007
50
40
30
20
10
0
(%)
D
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
Fig 8. GSM EDGE ACPR and rms EVM as functions of
ACPR
ACPR
(dBc)
(dBc)
50
60
70
80
56
60
64
68
72
V
f = 894 MHz.
a function of average load power; typical values
V
f = 894 MHz.
drain efficiency; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
20
ACPR
Dq
Dq
EVM
20
= 900 mA; T
= 900 mA; T
rms
ACPR
ACPR
400
40
UHF power LDMOS transistor
BLF4G10-160
400
600
60
case
case
40
= 25 C;
= 25 C;
© NXP B.V. 2007. All rights reserved.
80
D
P
001aag551
001aag553
L(AV)
(%)
(W)
100
60
4
3
2
1
0
EVM
(%)
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