BLF4G10-160,112 NXP Semiconductors, BLF4G10-160,112 Datasheet - Page 10

• Manufacturer Part Number: BLF4G10-160,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10-160,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 894MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058737112; BLF4G10-160; BLF4G10-160

NXP Semiconductors
BLF4G10-160_1
Product data sheet
Table 9.
[1]
[2]
Component
C1, C6, C8
C2, C7
C3, C4
C5, C10
C9
C11
C12
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
R1, R2
R3
R4
R5
R6
R7
R8
R9
R10
Q1
Q2
Q3
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with
thickness = 0.635 mm.
List of components (see
Description
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
ceramic capacitor
tantalum capacitor
ceramic capacitor
electrolytic capacitor
multilayer ceramic chip
capacitor
stripline
stripline
tapered stripline
stripline
stripline
stripline
stripline
tapered stripline
stripline
stripline
SMD resistor
SMD resistor
potentiometer
SMD resistor
SMD resistor
SMD resistor
SMD resistor
SMD resistor
SMD resistor
voltage regulator
transistor
BLF4G10-160
Rev. 01 — 22 June 2007
Figure 14
Value
68 pF
1.3 pF
100 nF
10 F
1 F
2200 F
18 pF
-
-
-
-
-
-
-
-
-
-
430
300
200
2 k
1.1 k
11 k
5.1
5.1 k
910
-
-
-
and
Figure
[1]
[1]
[1]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
Remarks
(W
(W
(W1
0.914 mm
(W
(W
(W
(W
(W1
17.221 mm
(W
(W
78L08
2N2222
15).
UHF power LDMOS transistor
L) 0.914 mm
L) 0.914 mm
L) 19.812 mm
L) 0.914 mm
L) 1.524 mm
L) 17.221 mm
L) 0.914 mm
L) 0.914 mm
W2
W2
BLF4G10-160
19.812 mm
L)
L)
0.914 mm
© NXP B.V. 2007. All rights reserved.
10.160 mm
24.384 mm
42.342 mm
42.418 mm
19.126 mm
6.858 mm
21.438 mm
22.479 mm
r
= 6.15 and
11.024 mm
20.625 mm
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