BLF4G10LS-160,112 NXP Semiconductors, BLF4G10LS-160,112 Datasheet - Page 7
![BASESTATION FINAL 1GHZ SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF4G10LS-160,112
Manufacturer Part Number
BLF4G10LS-160,112
Description
BASESTATION FINAL 1GHZ SOT502B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF4G10LS-160112.pdf
(15 pages)
Specifications of BLF4G10LS-160,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
894.2MHz
Gain
19.7dB
Voltage - Rated
65V
Current Rating
15A
Current - Test
900mA
Voltage - Test
28V
Power - Output
160W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.065 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
15 V
Continuous Drain Current
15 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2392
934058738112
BLF4G10LS-160
BLF4G10LS-160
934058738112
BLF4G10LS-160
BLF4G10LS-160
NXP Semiconductors
8. Test information
BLF4G10LS-160_1
Product data sheet
Fig 11. CDMA ACPR at 750 kHz and at 1980 kHz as functions of average load power; typical values, measured in a
Fig 12. Circuit schematic for 894 MHz production test circuit
V
CDMA demo test circuit
See
DS
RF in
= 28 V; I
Table 9
L1
for a list of components
Dq
C1
= 1100 mA; T
L2
V
bias
C5
C2
ACPR
case
(dBc)
R1
L3
35
45
55
65
75
= 25 C; f = 881.5 MHz.
28
C6
32
L4
Rev. 01 — 19 June 2007
ACPR
ACPR
1980
36
750
L5
40
L6
L7
P
44
L(AV)
001aag556
(dBm)
C7
48
C8
L8
BLF4G10LS-160
UHF power LDMOS transistor
C9
V
DD
L9
C3
C10
C4
© NXP B.V. 2007. All rights reserved.
L10
001aag557
RF out
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