BLF4G10LS-160,112 NXP Semiconductors, BLF4G10LS-160,112 Datasheet - Page 4

• Manufacturer Part Number: BLF4G10LS-160,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 894.2MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2392; 934058738112; BLF4G10LS-160; BLF4G10LS-160

NXP Semiconductors
BLF4G10LS-160_1
Product data sheet
Fig 1. One-tone CW power gain and drain efficiency
(dB)
G
p
21
19
17
15
V
f = 894 MHz.
as functions of load power; typical values
0
DS
= 28 V; I
G
D
Dq
p
80
= 900 mA; T
Table 8.
f
[1]
Code
C
D
E
F
G
1
= 894 MHz; f
0.2 overlap is allowed for measurement reproducibility.
[1]
case
160
RF gain grouping
= 25 C;
2
= 894.2 MHz
P
L
001aag546
(W)
240
Rev. 01 — 19 June 2007
60
40
20
0
(%)
D
Gain (dB) for two-tone
Min
18.5
19
19.5
20
20.5
Fig 2. Two-tone power gain and drain efficiency as
(dB)
G
p
22
20
18
16
V
f = 894 MHz.
functions of average load power; typical values
0
DS
= 28 V; I
G
Dq
D
p
40
= 900 mA; T
BLF4G10LS-160
UHF power LDMOS transistor
Max
19
19.5
20
20.5
21
case
80
= 25 C;
P
L(AV)
© NXP B.V. 2007. All rights reserved.
001aag547
(W)
120
60
40
20
0
(%)
D
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