BLF4G10LS-160,112 NXP Semiconductors, BLF4G10LS-160,112 Datasheet - Page 3

• Manufacturer Part Number: BLF4G10LS-160,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 894.2MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2392; 934058738112; BLF4G10LS-160; BLF4G10LS-160

NXP Semiconductors
6. Characteristics
7. Application information
BLF4G10LS-160_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-tone; f
I
The BLF4G10LS-160 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol Parameter
G
RL
IMD3
IMD5
IMD7
Dq
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
rs
p
= 25 C; unless otherwise specified.
= 900 mA; T
in
= 900 mA; P
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
power gain
input return loss
drain efficiency
third order intermodulation distortion
fifth order intermodulation distortion
seventh order intermodulation distortion
Characteristics
Application information
case
L
= 160 W (CW); f = 894 MHz.
= 25 C; unless otherwise specified; in a class-AB test circuit.
Rev. 01 — 19 June 2007
1
= 894 MHz; f
2
Conditions
V
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 894.2 MHz; RF performance at V
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 7.5 A
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 15 V; V
= V
= 0 V; V
GS(th)
GS(th)
Conditions
P
P
P
P
P
P
D
L(PEP)
L(PEP)
L(PEP)
L(PEP)
L(PEP)
L(PEP)
DS
DS
D
D
D
= 2.1 mA
+ 6 V;
+ 6 V;
DS
= 230 mA
= 900 mA
= 7.5 A
= 28 V
= 28 V;
= 0 V
BLF4G10LS-160
= 160 W
= 160 W
= 160 W
= 160 W
= 160 W
= 160 W
UHF power LDMOS transistor
Min Typ
65
2.5
2.65 3.15
-
35
-
-
-
-
Min
18.5 19.7 21
-
40
-
-
-
DS
= 28 V;
© NXP B.V. 2007. All rights reserved.
DS
-
2.9
-
42
-
11
0.065 -
3.0
Typ
42.5 -
= 28 V;
10
30
39
59
Max Unit
Max Unit
-
3.5
3.65 V
5
-
420 nA
-
-
6
27
36
55
3 of 15
dB
dB
%
dBc
dBc
dBc
V
V
A
S
pF
A