SHF-0189 Sirenza Microdevices Inc, SHF-0189 Datasheet - Page 3
![IC HFET ALGAAS/GAAS .5W SOT-89](/photos/5/65/56502/599-sot-89_sml.jpg)
SHF-0189
Manufacturer Part Number
SHF-0189
Description
IC HFET ALGAAS/GAAS .5W SOT-89
Manufacturer
Sirenza Microdevices Inc
Datasheet
1.SHF-0189.pdf
(6 pages)
Specifications of SHF-0189
Transistor Type
HFET
Frequency
1.96GHz
Gain
20.1dB
Voltage - Rated
9V
Current Rating
200mA
Noise Figure
3.2dB
Current - Test
100mA
Voltage - Test
8V
Power - Output
27.5dBm
Package / Case
SOT-89
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
599-1060-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SHF-0189
Manufacturer:
SIRENZA
Quantity:
51 000
Company:
Part Number:
SHF-0189
Manufacturer:
STANFORD
Quantity:
270
Company:
Part Number:
SHF-0189Z
Manufacturer:
SIRENZA
Quantity:
37 000
Company:
Part Number:
SHF-0189Z
Manufacturer:
RFMD21
Quantity:
6 979
Part Number:
SHF-0189Z
Manufacturer:
RFMD
Quantity:
20 000
EDS-101240 Rev G
Note: S-parameters are de-embedded to the device leads with Z
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
De-embedded S-Parameters (Z
0.0
0.2
0.2
3 GHz
2 GHz
0.5
0.5
4 GHz
0.2
S11 vs Frequency
0.5
1 GHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1.0
1.0
1.0
35
30
25
20
15
10
-5
0.35
0.25
0.15
0.05
5
0
6 GHz
0.3
0.2
0.1
0
0
S11
2.0
0
1
8 GHz
2.0
2.0
1
5.0
2
Gain & Isolation
Frequency (GHz)
2
S
5.0
5.0
=Z
3
DC-IV Curves
inf
L
3
=50 Ohms, V
Gain
S
V
=Z
4
DS
L
=50Ω. The data represents typical performace of the device.
4
(V)
5
0.0
5
0.2
Gmax
0.2
Isolation
6
6
0.5
0.5
DS
0.2
7
=8V, I
7
4 GHz
S22 vs Frequency
3 GHz
8
2 GHz
0.5
8
-10
-15
-20
-25
-30
-35
-40
-45
-50
DS
6 GHz
=100mA, 25 ° ° ° ° ° C)
V
1.0
1.0
GS
1.0
SHF-0189(Z)
1 GHz
= -2.0 to 0V, 0.2V steps
8 GHz
2.0
T=25 ° ° ° ° ° C
S22
2.0
2.0
5.0
5.0
5.0
inf
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