BG 3130R H6327 Infineon Technologies, BG 3130R H6327 Datasheet - Page 6

• Manufacturer Part Number: BG 3130R H6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BG 3130R H6327

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Details

Gate 1 forward transconductance
g
amp. A = amp. B
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
fs
DS
=
mS
mA
= 5V, V
40
30
25
20
15
10
13
11
10
5
0
9
8
7
6
5
4
3
2
1
0
0
0
(I
D
0.5
), V
4
G2S
DS
1
8
D
2V
= 5V, V
= 4V, R
1.5
=
12
2
(V
16
2.5V
GG
2.5
G2S
G1
20
) amp.A=amp.B
= 120k
3
= Parameter
24
3V
3.5
28 mA
3.5V
4
I
V
4V
D
V
GG
36
5
6
Drain current I
V
amp. A = amp. B
Drain current I
V
amp. A = amp. B
DS
G2S
mA
µA
= 5V, V
32
24
20
16
12
22
18
16
14
12
10
= 4V, R
8
4
0
8
6
4
2
0
0
0
0.2 0.4 0.6 0.8
1
G2S
G1
D
D
= Parameter
= Parameter in k
2
=
= (V
(V
3
GG
G1S
1
)
4
1.2 1.4 1.6
)
5
BG3130...
2007-06-01
2.5V
2V
4V
V
3V
1.5V
V
V
70
80
100
120
V
GG
G1S
=V DS
7
2