BG 3130R E6327 Infineon Technologies, BG 3130R E6327 Datasheet
BG 3130R E6327
Specifications of BG 3130R E6327
SP000014450
Related parts for BG 3130R E6327
BG 3130R E6327 Summary of contents
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DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) • Two AGC amplifiers in one single package • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • ...
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Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA ...
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Electrical Characteristics Parameter AC Characteristics Forward transconductance Gate1 input capacitance MHz Output capacitance MHz Power gain f = 800 MHz MHz Noise figure f = 800 ...
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Total power dissipation P amp amp. B 300 mW 200 150 100 Output characteristics I D amp amp ...
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Gate 1 forward transconductance = ƒ( 5V G2S amp amp 2. ƒ(V ...
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Crossmodulation V = (AGC) unw kΩ 120 dBµV 100 Crossmodulation test circuit R GEN 50 Ohm AGC V AGC R1 2.2 µH 10 ...
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Package Outline Pin 1 marking Foot Print Marking Layout Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel ackage SOT363 P 2 ±0.2 +0.1 6x 0.2 0.1 MAX. -0.05 0.1 M 0.1 6 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...