BG 3130R E6327 Infineon Technologies, BG 3130R E6327 Datasheet
Home Discrete Semiconductor Products RF FETs BG 3130R E6327
Manufacturer Part Number
BG 3130R E6327
Description
MOSFET N-CH DUAL 8V SOT-363R
Manufacturer
Infineon Technologies
Specifications of BG 3130R E6327
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
24dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.3dB
Current - Test
14mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BG3130RE6327XT SP000014450
DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stage for UHF
• Two AGC amplifiers in one single package
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
BG3130
BG3130R
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BG3130
BG3130R
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
and VHF -tuners e.g. (NTSC, PAL)
Package
SOT363
SOT363
1=G1*
1=G1*
2=G2
2=S
1
Pin Configuration
3=D*
3=D*
Symbol
V
I
±I
±V
P
T
T
D
stg
ch
DS
tot
AGC
G1/2SM
Input
G1/G2S
RF
4=D**
4=D**
RG1
VGG
G2
G1
5=S
5=G2
-55 ... 150
6
5
GND
4
Value
200
150
25
8
1
6
6=G1**
6=G1**
Drain
BG3130...
2005-11-03
RF Output
1
Marking
KAs
KHs
+ DC
2
3
Unit
V
mA
V
mW
°C
Related parts for BG 3130R E6327
BG 3130R E6327 Summary of contents
DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) • Two AGC amplifiers in one single package • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • ...
Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA ...
Electrical Characteristics Parameter AC Characteristics Forward transconductance Gate1 input capacitance MHz Output capacitance MHz Power gain f = 800 MHz MHz Noise figure f = 800 ...
Total power dissipation P amp amp. B 300 mW 200 150 100 Output characteristics I D amp amp ...
Gate 1 forward transconductance = ƒ( 5V G2S amp amp 2. ƒ(V ...
Crossmodulation V = (AGC) unw kΩ 120 dBµV 100 Crossmodulation test circuit R GEN 50 Ohm AGC V AGC R1 2.2 µH 10 ...
Package Outline Pin 1 marking Foot Print Marking Layout Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel ackage SOT363 P 2 ±0.2 +0.1 6x 0.2 0.1 MAX. -0.05 0.1 M 0.1 6 ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...
Related keywords
BG 3130R E6327 datasheet BG 3130R E6327 data sheet BG 3130R E6327 pdf datasheet BG 3130R E6327 component BG 3130R E6327 part BG 3130R E6327 distributor BG 3130R E6327 RoHS BG 3130R E6327 datasheet download