BG 3130R H6327 Infineon Technologies, BG 3130R H6327 Datasheet

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BG 3130R H6327

Manufacturer Part Number
BG 3130R H6327
Description
MOSFET N-CH DUAL 8V 25MA SOT363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BG 3130R H6327

Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
24dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.3dB
Current - Test
14mA
Voltage - Test
5V
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
 Details
DUAL N-Channel MOSFET Tetrode
BG3130
BG3130R
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BG3130
BG3130R
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
Two gain controlled input stage for UHF
Two AGC amplifiers in one single package
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
Pb-free (RoHS compliant) package
Qualified according AEC Q101
and VHF -tuners e.g. (NTSC, PAL)
Package
SOT363
SOT363
1=G1*
1=G1*
2=G2
2=S
1
Pin Configuration
3=D*
3=D*
AGC
Input
RF
4=D**
4=D**
RG1
VGG
G2
G1
5=S
5=G2
6
5
GND
4
6=G1**
6=G1**
Drain
BG3130...
2007-06-01
RF Output
1
Marking
KAs
KHs
+ DC
2
3

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BG 3130R H6327 Summary of contents

Page 1

DUAL N-Channel MOSFET Tetrode Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) Two AGC amplifiers in one single package Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation at gain ...

Page 2

Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature Thermal Resistance Parameter 1) Channel - soldering point 1 For calculation of R thJA please ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage +I ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics Forward transconductance Gate1 input capacitance MHz Output capacitance MHz Power gain f = 800 MHz MHz Noise figure f ...

Page 5

Total power dissipation P amp amp. B 300 mW 200 150 100 Output characteristics I D amp amp ...

Page 6

Gate 1 forward transconductance 5V G2S amp amp 2. Drain current ...

Page 7

Crossmodulation V = (AGC) unw 120 dBµV 100 AGC 7 BG3130... 2007-06-01 ...

Page 8

Crossmodulation test circuit R GEN AGC DS 4n7 R1 10k 2.2 uH 4n7 4n7 50 RG1 BG3130... 4n7 RL 50 Semibiased 2007-06-01 ...

Page 9

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 10

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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