BLF6G10LS-200R,112 NXP Semiconductors, BLF6G10LS-200R,112 Datasheet - Page 6

IC BASESTATION FINAL SOT502B

BLF6G10LS-200R,112

Manufacturer Part Number
BLF6G10LS-200R,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G10LS-200R,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
20dB
Voltage - Rated
65V
Current Rating
49A
Current - Test
1.4A
Voltage - Test
28V
Power - Output
40W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
- 0.5 V to + 13 V
Continuous Drain Current
49 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061248112
BLF6G10LS-200R
BLF6G10LS-200R
NXP Semiconductors
Table 8.
All capacitors should be soldered vertically except C20.
[1]
[2]
BLF6G10LS-200R_1
Preliminary data sheet
Component
C1, C3, C11, C12, C16 multilayer ceramic chip capacitor
C2
C5, C6
C7, C8, C9, C10
C13, C14
C15
C17, C18
L1
Q1
R1, R2, R3
Fig 7. Component layout
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
The drawing is not to scale.
List of components (see
Table 8
for list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Electrolytic capacitor
Ferrite SMD bead
BLF6G10LS-200R
SMD resistor
R1
C1
C3
Figure 6
800 -1000 MHz
C2
NXP
V1.0
IN
and
Rev. 01 — 21 January 2008
R2
Figure
7)
Value
68 pF
13 pF
10 pF
220 nF
4.7 F; 50 V
1.5 pF
220 F; 63 V
-
-
9.1 ; 0.1 W
Q1
800 -1000 MHz
C5
C6
C7
NXP
OUT
V1.0
C8
[1]
[1]
[1]
[2]
[1]
C9
C11 C13
C10
Remarks
solder vertically
solder vertically
solder vertically
Vishay VJ1206Y224KXB
solder vertically
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C12
BLF6G10LS-200R
C14
C17
r
= 3.5 and
Power LDMOS transistor
L1
C18
© NXP B.V. 2008. All rights reserved.
R3
C15
C16
001aah524
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