BLF6G10LS-200R,112 NXP Semiconductors, BLF6G10LS-200R,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G10LS-200R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061248112; BLF6G10LS-200R; BLF6G10LS-200R

NXP Semiconductors
8. Test information
BLF6G10LS-200R_1
Preliminary data sheet
Fig 4. 2-carrier W-CDMA power gain and drain
Fig 6. Test circuit for operation at 800 MHz
input
50
(dB)
G
p
22
21
20
19
18
V
carrier spacing 10 MHz.
efficiency as functions of average load power;
typical values
The drawing is not to scale.
0
DS
G
= 28 V; I
D
p
7.4 2-carrier W-CDMA
Dq
V
GG
20
= 1400 mA; f = 881 MHz ( 5 MHz);
R1
C1
40
P
L(AV)
001aah521
C3
(W)
Rev. 01 — 21 January 2008
R2
C2
60
40
30
20
10
0
(%)
D
C7
C9
Fig 5. 2-carrier W-CDMA adjacent channel power ratio
IMD3,
ACPR
(dBc)
C8
C10
35
40
45
50
55
V
carrier spacing 10 MHz.
and third order intermodulation distortion as
functions of average load power; typical values
C5
C6
0
DS
C11
C12
= 28 V; I
C13
C14
IMD3
ACPR
BLF6G10LS-200R
Dq
20
= 1400 mA; f = 881 MHz ( 5 MHz);
C17
C18
R3
L1
Power LDMOS transistor
40
V
DD
P
L(AV)
© NXP B.V. 2008. All rights reserved.
C15
C16
001aah522
(W)
60
001aah523
output
50
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