BLF6G10LS-200R,112 NXP Semiconductors, BLF6G10LS-200R,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G10LS-200R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061248112; BLF6G10LS-200R; BLF6G10LS-200R

NXP Semiconductors
BLF6G10LS-200R_1
Preliminary data sheet
Fig 2. Two-tone CW power gain and drain efficiency
(dB)
G
p
21
19
17
15
V
as functions of peak envelope load power;
typical values
0
DS
= 28 V; I
7.2 One-tone CW
7.3 Two-tone CW
G
D
Dq
p
120
= 1400 mA; f = 881 MHz ( 100 kHz).
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
V
typical values
DS
240
= 28 V; I
P
L(PEP)
001aah519
Dq
(W)
= 1400 mA; f = 881 MHz.
(dB)
Rev. 01 — 21 January 2008
G
360
p
21
19
17
15
60
40
20
0
(%)
0
D
40
G
Fig 3. Two-tone CW intermodulation distortion as
D
p
(dBc)
IMD
80
20
30
40
50
60
V
function of peak envelope load power; typical
values
0
DS
= 28 V; I
120
BLF6G10LS-200R
Dq
160
60
= 1400 mA; f = 881 MHz ( 100 kHz).
001aah518
P
L
(W)
200
Power LDMOS transistor
60
40
20
0
(%)
120
D
P
L(PEP)
© NXP B.V. 2008. All rights reserved.
001aah520
IMD3
IMD5
IMD7
(W)
180
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