BLF6G22LS-100,112 NXP Semiconductors, BLF6G22LS-100,112 Datasheet - Page 9

• Manufacturer Part Number: BLF6G22LS-100,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 25W(Typ)
• Power Gain (typ)@vds: 18.2@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 11S
• Drain Source Resistance (max): 160@6.15Vmohm
• Reverse Capacitance (typ): 2.1@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 29%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061129112; BLF6G22LS-100; BLF6G22LS-100

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G22LS-100
Product data sheet
Document ID
BLF6G22LS-100 v.3
Modifications:
BLF6G22LS-100 v.2
BLF6G22LS-100 v.1
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
20100331
20080218
Release date
20101112
•
Table
Abbreviations
6: correction: C_rs condition f = 91 MHz to f = 1 MHz
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
Rev. 3 — 12 November 2010
Change notice
-
-
-
BLF6G22LS-100
Power LDMOS transistor
Supersedes
BLF6G22LS-100 v.2
BLF6G22LS-100 v.1
-
© NXP B.V. 2010. All rights reserved.
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